THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THEREOF USING THE SAME

• Main Authors: AHN, TAE JOON, KANG, SU HYUK
• Format: Patent
• Language: English
• Published: 03.06.2008
• Subjects: DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A TFT(Thin Film Transistor), a TFT array substrate by using the same and a manufacturing method thereof are provided to form a poly silicon type active pattern by means of ultraviolet rays without a laser apparatus and a doping apparatus. A poly silicon type active pattern(114) is formed on a substrate(101). A gate electrode is overlapped with a channel area of the poly silicon type active pattern by the gate insulating layer interposed therebetween. A source electrode is contacted with a source area of the poly silicon type active pattern. A drain electrode is contacted with a drain area of the poly silicon type active pattern. The thickness of the source area and the drain area of the poly silicon type active pattern is thicker than that of the channel area relatively. The source and drain areas of the poly silicon type active pattern is formed by crystallization of the first semiconductor layer made of amorphous silicon and the second semiconductor layer made of non-amorphous silicon with impurities.