SOLUTION FOR IMMERSION EXPOSURE AND IMMERSION EXPOSURE METHOD

The object is to resolve a fine pattern with a narrower line width/line space by immersion exposure technology in the manufacture of a semiconductor or the like. A solution for use in immersion exposure comprising a saturated hydrocarbon compound as the main ingredient, wherein the content of an imp...

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Bibliographic Details
Main Authors NAKAYAMA NORIO, KAGAYAMA AKIFUMI, TAMATANI HIROAKI
Format Patent
LanguageEnglish
Published 23.05.2008
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:The object is to resolve a fine pattern with a narrower line width/line space by immersion exposure technology in the manufacture of a semiconductor or the like. A solution for use in immersion exposure comprising a saturated hydrocarbon compound as the main ingredient, wherein the content of an impurity or impurities having an unsaturated bond or a heteroatom in its structure in the solution is as follows: (i) 2 Vg/mL or less in total for a compound having a conjugated unsaturated bond; (ii) 30 Vg/mL or less in total for a compound having no conjugated unsaturated bond but having a non-conjugated unsaturated bond; (iii) 15 Vg/mL or less in total for an amine having no unsaturated bond; and (iv) 100 Vg/mL or less in total for a heterocyclic compound, an alcohol, an ether and a haloganated compound other than the compound defined in any one of (i) to (iii).
Bibliography:Application Number: KR20087007462