METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING

A method and an apparatus for photomask plasma etching are provided to enhance efficiency thereof by improving a control of critical dimensions and process uniformity. A support pedestal(124) is arranged in an inside of a process chamber(102). The support pedestal is configured to receive a photomas...

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Main Authors OUYE ALAN HIROSHI, BIVENS DARIN, PANAYIL SHEEBA J, SABHARWAL AMITABH, KUMAR AJAY, LEWINGTON RICHARD, CHANDRACHOOD MADHAVI R
Format Patent
LanguageEnglish
Published 07.05.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method and an apparatus for photomask plasma etching are provided to enhance efficiency thereof by improving a control of critical dimensions and process uniformity. A support pedestal(124) is arranged in an inside of a process chamber(102). The support pedestal is configured to receive a photomask. An RF power source is formed to generate plasma inside the process chamber. A shield(170) is arranged inside the process chamber above the pedestal. The shield includes a plate having a plurality of apertures. The shield is configured to control the distribution of charged and neutral species passing through the plate, wherein the plate comprises two zones having at least one characteristic different from each other. The characteristic is a material or a potential bias.
Bibliography:Application Number: KR20070086473