METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device is provided to prevent generation of a void and a core within a floating gate by decreasing a line-width of upper and lower part of a device isolation film pattern by using a SC-1 solution. Device isolation film patterns(110) protruded from a substrat...

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Bibliographic Details
Main Authors KIM, DONG HWAN, KIM, JIN HONG, LEE, SANG KYOUNG, GOO, BON WOOK
Format Patent
LanguageEnglish
Published 17.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device is provided to prevent generation of a void and a core within a floating gate by decreasing a line-width of upper and lower part of a device isolation film pattern by using a SC-1 solution. Device isolation film patterns(110) protruded from a substrate are formed on the substrate, and a nitride film pattern(112) is formed between the device isolation film patterns. An upper side face of the device isolation film pattern is exposed by removing a part of the upper part of the nitride film pattern by using an etchant containing H3PO3. A portion of the exposed device isolation film pattern is cleaned by using a cleaning solution containing NH4OH and H2O2. A side surface of the protruded device isolation film pattern is exposed by removing completely the remaining nitride film pattern by using the etchant containing H3PO3. The portion of the exposed device isolation film pattern is cleaned by using the cleaning solution containing NH4OH and H2O2.
Bibliography:Application Number: KR20060099214