METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device is provided to perform a heat treatment process without changing properties of an SOG(Spin On Glass) material by using a gradually rising temperature control method. A trench is formed on a semiconductor substrate. A liner insulating layer is formed...

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Bibliographic Details
Main Authors SHIM, JUNG MYOUNG, SEO, YOUNG HEE
Format Patent
LanguageEnglish
Published 04.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device is provided to perform a heat treatment process without changing properties of an SOG(Spin On Glass) material by using a gradually rising temperature control method. A trench is formed on a semiconductor substrate. A liner insulating layer is formed within the trench. An SOG material is formed on the semiconductor substrate including the trench in order to bury the trench. A thermal process including a standby period, a lamp-up period, a main heat-treatment period, a lamp-down period, and a stabilization period is performed in order not to change properties of the SOG material. A sidewall oxide layer is formed within the trench before a liner insulating layer forming process. The liner insulating layer is formed with an HDP(High Density Plasma) oxide layer.
Bibliography:Application Number: KR20060096182