METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

• Main Authors: YANG, KI HONG, JIN, GYU AN
• Format: Patent
• Language: English
• Published: 03.04.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for manufacturing a flash memory device is provided to realize a relatively fine design rule by employing a polysilicon layer/tungsten layer process in a gate pattern and to easily manufacture flash memory devices in the technology of 90mn or below. A method for manufacturing a flash memory device includes defining a cell area on a substrate(30); forming a plurality of floating gates in the cell area of the substrate; forming an insulation film(32) on the floating gate; producing a recess part to expose the floating gate by patterning the insulation film; forming a dielectric thin film(36) along the recess part; forming a first conductive film for a control gate on the dielectric thin film; and forming a second conductive film on the first conductive film. The method further includes eliminating the second conductive film until the first conductive film is exposed by performing a first chemical mechanical polishing process; and removing the first and second conductive films by performing a second chemical mechanical polishing process until the dielectric film is exposed.