FIRING METHOD OF PHASE RANDOM MEMORY DEVICE AND PHASE RANDOM MEMORY DEVICE

A firing method of a phase change random access memory device and a phase change random access memory device thereof are provided to perform firing by using a firing current obtained by adding an additional current to a write current after write operation is performed. According to a firing method o...

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Bibliographic Details
Main Authors KIM, YOUNG RAN, LIM, KI WON, CHUNG, WON RYUL
Format Patent
LanguageEnglish
Published 31.03.2008
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A firing method of a phase change random access memory device and a phase change random access memory device thereof are provided to perform firing by using a firing current obtained by adding an additional current to a write current after write operation is performed. According to a firing method of a phase change random access memory device, a write current is applied to phase change random access memory devices(210). Data corresponding to the write current is checked to be written into the phase change memory devices. When the data is written into the phase change memory devices, a firing current which is obtained by adding an additional current to the write current(290) is applied to the phase change memory devices.
Bibliography:Application Number: KR20060093727