EXPOSURE MASK, METHOD FOR PRODUCING SAME, AND METHOD FOR TRANSFERRING PATTERN

A mask having a mask pattern wherein an original pattern is separated into at least two partial patterns arranged at an interval finer than the resolution limit is prepared. First relation between the width of the interval of partial patterns and the dimensions of a pattern formed on a substrate whe...

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Bibliographic Details
Main Author SUGIMOTO FUMITOSHI
Format Patent
LanguageEnglish
Published 10.03.2008
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A mask having a mask pattern wherein an original pattern is separated into at least two partial patterns arranged at an interval finer than the resolution limit is prepared. First relation between the width of the interval of partial patterns and the dimensions of a pattern formed on a substrate when the mask pattern is transferred is acquired. Based on the dimensions of a pattern to be formed on a substrate and the first relation, the width of the interval separating the partial patterns constituting the mask pattern is determined. Based on the width of the interval thus determined, a mask pattern separated into at least two partial patterns is formed on the mask. ® KIPO & WIPO 2008
Bibliography:Application Number: KR20087002474