FILM FORMATION APPARATUS AND METHOD OF USING THE SAME

• Main Authors: NODERA NOBUTAKE, HASEBE KAZUHIDE, YAMAMOTO KAZUYA
• Format: Patent
• Language: English
• Published: 03.01.2008
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A film forming apparatus is provided to suppress contamination of particles in forming a silicon nitride layer or a silicon oxynitride layer by forcibly exhausting the byproducts separated from the inner surface of a reaction chamber. A layer selected from a group composed of a silicon nitride layer or a silicon oxynitride layer is formed on a substrate to be processed in a reaction chamber of a film forming apparatus. The substrate to be processed is unloaded from the reaction chamber. While the inner surface of the reaction chamber is heated to a post-process temperature, post-process gas for nitridization is supplied to the inside of the reaction chamber to perform nitridization of a byproduct layer attached to the inner surface of the reaction chamber. The inner surface of the reaction chamber is cooled rapidly from the post-process temperature to crack the byproduct layer after the nitridization by using thermal stress while the byproduct layer is separated from the inner surface of the reaction chamber. The inside of the reaction chamber is forcibly exhausted so that the byproduct layer separated from the inner surface is loaded into an air current to be exhausted from the reaction chamber. The post-process gas includes gas selected from a group composed of ammonia and nitride oxide.