MANUFACTURING EQUIPMENT FOR POLY SILICON INGOT

• Main Authors: KIM, YOUNG JO, JO, YOUNG SANG
• Format: Patent
• Language: English
• Published: 18.12.2007
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A poly silicon ingot manufacturing apparatus is provided to cool effectively a melting pot and to form uniform grains by installing a cooling plate at a lower part of the melting pot. A melting pot(230) is formed to melt silicon. A plurality of transfer shafts(251,252) are formed to adjust the height of the melting pot. A plurality of heaters(221,222) are formed to heat the melting pot. A cooling plate(260) is positioned at a lower part of the melting pot in order to cool the melting pot. The transfer shafts are installed at an edge of a supporting plate attached to a lower part of the melting pot. The heaters are formed to surround the melting pot. The inside of the cooling plate is filled with a cooling fluid. The melting pot is installed within a chamber having a predetermined degree of vacuum. Further, a pipe for flowing a cooling water is formed at inside of a wall surface of the chamber.