METHOD OF MAKING A NITRIDED GATE DIELECTRIC
A gate dielectric (14) is treated with a nitridation step (16) and an anneal. After this, an additional nitridation step (20) and anneal is performed. The second nitridation (20) and anneal results in an improvement in the relationship between gate leakage current density and current drive of the tr...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
27.11.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A gate dielectric (14) is treated with a nitridation step (16) and an anneal. After this, an additional nitridation step (20) and anneal is performed. The second nitridation (20) and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors (60) that are ultimately formed. |
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Bibliography: | Application Number: KR20077019456 |