METHOD OF MAKING A NITRIDED GATE DIELECTRIC

A gate dielectric (14) is treated with a nitridation step (16) and an anneal. After this, an additional nitridation step (20) and anneal is performed. The second nitridation (20) and anneal results in an improvement in the relationship between gate leakage current density and current drive of the tr...

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Bibliographic Details
Main Authors LUO TIEN YING, ADETUTU OLUBUNMI O, TSENG HSING H, LIM, SANG WOO, GRUDOWSKI PAUL A
Format Patent
LanguageEnglish
Published 27.11.2007
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Summary:A gate dielectric (14) is treated with a nitridation step (16) and an anneal. After this, an additional nitridation step (20) and anneal is performed. The second nitridation (20) and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors (60) that are ultimately formed.
Bibliography:Application Number: KR20077019456