METHOD OF FORMING OXIDE AND OXIDE DEPOSITING APPARATUS

A method for forming an oxide film and an oxide film depositing apparatus are provided to form an oxide film of a uniform thickness along the stepped portion of a lower structure having a minute pattern and to obtain a high step coverage characteristic. A method for forming an oxide film includes th...

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Bibliographic Details
Main Authors LEE, JIN HO, HAN, YOUNG KI, KWAK, JAE CHAN
Format Patent
LanguageEnglish
Published 10.10.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming an oxide film and an oxide film depositing apparatus are provided to form an oxide film of a uniform thickness along the stepped portion of a lower structure having a minute pattern and to obtain a high step coverage characteristic. A method for forming an oxide film includes the steps of: supplying an Si containing gas including at least one among SiH4, Si2H6, Si3H8, TEOS(Tetraethylorthosilicate), DCS(Dichlorosilane), HCD(Hexachlorosilane), and TSA(Trisilylamine) to a substrate(110), and adsorbing the gas on the substrate(110); purging the Si containing gas which is not adsorbed on the substrate(110); forming an oxide film by oxidizing the Si containing gas which is adsorbed on the surface of the substrate(110) by supplying a reaction gas to the substrate(110); and purging the reaction gas which does not react with the Si containing gas.
Bibliography:Application Number: KR20060031292