A METHOD OF FABRICATING A THIN FILM

• Main Authors: PERSONNIC SEBASTIEN, TAUZIN AURELIE, LAUGIER FREDERIC
• Format: Patent
• Language: English
• Published: 18.09.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for fabricating a thin film is provided to suppress influence of electrical properties of the thin film by providing effectively the thin film without including impurities. An implantation process is performed to form an ion-concentrated layer in a predetermined depth of a substrate and to implant ions into a surface of the substrate formed with a semiconductor material in order to define a thin film on an upper part of the substrate by the ion-concentrated layer(S1). A contacting process is performed to contact a reinforcing material with a surface of the substrate(S2). A separation process is performed to separate the thin film from the reinforcing material by splitting the ion-concentrated layer(S4). A thermal process is performed to capture contaminants without causing separation of the substrate before the separation process is performed(S3). A perturbed region is removed by performing the separation process(S5).