WAFER AND METHOD OF PRODUCING THE SAME
A method for fabricating a wafer is provided to effectively remove micro-projections with a height not less than 1 mum such that micro-projections tend to be generated from the backside of a wafer while the micro-projections maintain an excellent GBIR(global backside ideal range), by supporting the...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
22.08.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A method for fabricating a wafer is provided to effectively remove micro-projections with a height not less than 1 mum such that micro-projections tend to be generated from the backside of a wafer while the micro-projections maintain an excellent GBIR(global backside ideal range), by supporting the wafer by a susceptor in a heat treatment for the wafer. While a polishing liquid is supplied to the surface of a combined abrasive cloth(2), a predetermined surface of a wafer(6) is polished to be planarized. A sheet-feed polished can be used in the polishing process. The combined cloth includes a urethane compound that includes a soft segment having polyfunctional isocyanate, a hard segment having polyfunctional polyol and an expansion ratio of 1.1~4, and a silica made of silica having a hydroxy group and an average grain size of 0.2~10 mum. The occupancy ratio of the hard segment in the urethane compound is 40~55 percent by a molecular weight ratio. The volume ratio of silica in the entire compound abrasive cloth is 20~60 percent. The Shore D hardness of the combined abrasive cloth is 40~80. |
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Bibliography: | Application Number: KR20070016767 |