MULTIPLE IRRADIATION EFFECT-CORRECTED DOSE DETERMINATION TECHNIQUE FOR CHARGED PARTICLE BEAM LITHOGRAPHY

• Main Authors: SUZUKI JUNICHI, EMI KEIKO, ABE TAKAYUKI
• Format: Patent
• Language: English
• Published: 20.08.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A lithography apparatus, a beam irradiation amount correcting method, a readable storing medium with a beam irradiation amount correcting program are provided to restrain the generation of size variation due to a proximity effect, a blur effect or a loading effect. The lithography apparatus includes a pattern imaging unit and a control unit. The pattern imaging unit(12) includes a radiation source for emitting an energy beam and a beam column functioning as a beam pattern generator. The control unit(14) is connected to the pattern imaging unit. The control unit includes a predetermined member capable of correcting a proximity effect and a blur effect. The predetermined member is composed of a first calculating portion for calculating the amount of irradiation for correcting the proximity effect, a functioning portion for calculating the amount of irradiation for correcting the blur effect, a synthesizing portion for synthesizing the calculated irradiation amount and determining the amount of irradiation for correction, and a beam control portion for generating a beam control signal and supplying the beam control signal to the beam column. The functioning portion is composed of second calculating portion and a third calculating portion.