METHOD OF FORMING TUNGSTEN FILM

• Main Authors: SUZUKI KENJI, CHENG FANG, ISHIZUKA HOTAKA, SATOH KOHICHI, MIZOGUCHI YASUTAKA, YOSHIOKA MASAO
• Format: Patent
• Language: English
• Published: 18.07.2007
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A tungsten film-forming method which can improve throughput and can improve filling property so that good filling property is obtained although diameter of contact hole is small is provided. In a method of forming a tungsten film on a treatment object in a treatment container capable of performing vacuum suction, the method comprises: an initial tungsten film-forming process(79) of forming an initial tungsten film by alternately and repeatedly performing a reduction gas supply process(70) of supplying reduction gas and a tungsten gas supply process(72) of supplying tungsten-containing gas with a purging process(74) being interposed between the reduction gas supply process and the tungsten gas supply process to performing vacuum suction while supplying an inert gas; a passivation tungsten film-forming process(84) of forming a passivation tungsten film by passing the reduction gas and the tungsten-containing gas through the treatment container; and a principal tungsten film-forming process(80) of forming a principal tungsten film by continuously passing the reduction gas and the tungsten-containing gas through the treatment container.