SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Author: JUN, JUNG HAN
• Format: Patent
• Language: English
• Published: 27.06.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device is provided to increase the effective channel length in a region where an isolation layer comes in contact with an active region by forming a gate line on a substrate wherein the gate line has protrusions at it both sides in a region where the isolation layer comes in contact with a gate line formed on a substrate in the active region. An isolation layer for defining a field region and an active region is formed in a substrate. A gate line has protrusions(P) at its both sides only in a region where the isolation layer comes in contact with the active region. The protrusion can be made of the same material as that of the gate line. A source/drain(S/D) is formed in the substrate exposed to both sides of the gate line. The width of the gate line in a region where the isolation layer comes in contact with the active region is greater than that of the gate line in a region except the region where the isolation layer comes in contact with the active region.