SYSTEM AND METHOD FOR FABRICATING CONTACT HOLES

A method of forming a plurality of contact holes (20, 2) of varying pitch and density in a contact layer (56) of an integrated circuit device (10) is provided. The plurality of contact holes (20, 24) can include a plurality of regularly spaced contact holes (20) having a first pitch along a first di...

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Bibliographic Details
Main Authors KIM, HUNG EIL, KYE, JONG WOOK, TABERY CYRUS E, MINVIELLE ANNA M
Format Patent
LanguageEnglish
Published 17.01.2007
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A method of forming a plurality of contact holes (20, 2) of varying pitch and density in a contact layer (56) of an integrated circuit device (10) is provided. The plurality of contact holes (20, 24) can include a plurality of regularly spaced contact holes (20) having a first pitch along a first direction and a plurality of semi-isolated contact holes (24) having a second pitch along a second direction. A double-dipole illumination source (42, 44) can transmit light energy through a mask (48) having a pattern corresponding to a desired contact hole pattern. The double-dipole illumination source (42, 44) can include a first dipole aperture (60), which is oriented and optimized for patterning the regularly spaced contact holes (20), and a second dipole aperture (62), which is oriented substantially orthogonal to the first dipole aperture (60) and optimized for patterning the plurality of semi-isolated contact holes (24). The contact layer (56) can be etched using the patterned photoresist layer (58). ® KIPO & WIPO 2007
Bibliography:Application Number: KR20067022966