MEMORY DEVICE HAVING MESHED VP LINE

• Main Authors: KWON, HYUK JOON, HAN, SANG KEUN, KIM, JUN HO
• Format: Patent
• Language: English
• Published: 05.01.2007
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A memory device having a meshed VP line is provided to supply a cell capacitor plate voltage in order to prevent the influence from noise, by including VP lines with a meshed structure. In a memory device(300) including at least one cell array(310) including a plurality of cell blocks(315) including...