PHASE CHANGE MEMORY CELLS HAVING A CELL DIODE AND A BOTTOM ELECTRODE SELF-ALIGNED WITH EACH OTHER AND METHODS OF FABRICATING THE SAME
A phase change memory cell having a cell diode and a bottom electrode self-aligned with each other and a method for fabricating the same are provided to increase a degree of integration of a phase change memory device by adding a complicated process. A bottom insulating layer(55) is formed on a semi...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
26.12.2006
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Subjects | |
Online Access | Get full text |
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Summary: | A phase change memory cell having a cell diode and a bottom electrode self-aligned with each other and a method for fabricating the same are provided to increase a degree of integration of a phase change memory device by adding a complicated process. A bottom insulating layer(55) is formed on a semiconductor substrate(51). A cell contact hole(57a) penetrates the bottom insulating layer. A vertical cell diode is provided within a bottom region of the cell contact hole. A bottom electrode(67a) is provided within the cell contact hole on the vertical cell diode and is self-aligned with the cell diode. An upper surface of the bottom electrode has the same level as a level of an upper surface of the bottom insulating layer. |
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Bibliography: | Application Number: KR20050053217 |