PROCESS FOR FABRICATING SEMICONDUCTOR LASER DEVICE

• Main Authors: CHIKUMA KIYOFUMI, KIMURA YOSHINORI, MIYACHI MAMORU
• Format: Patent
• Language: English
• Published: 13.12.2006
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

A process for fabricating a multi- wavelength semiconductor laser device exhibiting on excellent mass productivity. A first intermediate product is produced by forming a first multilayer laser oscillating section (1a) and a metal bonding layer on a semiconductor substrate SUB1, and a second intermediate product is produced by forming a second multilayer laser oscillating section (2a) smaller than the first laser oscillating section (1a) and a metal bonding layer that forms a trench contiguous thereto on a supporting substrate. Adhesive layers of the first and second intermediate products are fused together by bringing waveguides (1b, 2b) into close proximity thus producing an integrated adhesive layer CNT. After the first and second oscillating section (1a, 2a) are fixed, the supporting substrate is stripped from the second laser oscillating section (2a) to expose the adhesive layer CNT partially, thus fabricating a semiconductor laser device LD where the exposed adhesive layer CNT serves as a common electrode.