PROCESS FOR FORMING ZINC OXIDE FILM

• Main Authors: AKIYAMA TOSHIO, TAKAMATSU YUKICHI
• Format: Patent
• Language: English
• Published: 06.12.2006
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A process for forming a zinc oxide film with extremely high quality and high purity on surfaces of various substrates safely according to the CVD(Chemical Vapor Deposition) method is provided. A process for forming a zinc oxide film on the surface of a substrate comprises: a step of vaporizing a raw material prepared by dissolving dimethylzinc or diethylzinc into an organic solvent, and supplying the vaporized raw material to a chemical vapor deposition apparatus; and a step of simultaneously supplying a gas comprising an oxidizer gas to the chemical vapor deposition apparatus. A process for forming a zinc oxide film on the surface of a substrate comprises: a step of supplying a vaporized gas of dimethylzinc or diethylzinc to a chemical vapor deposition apparatus; and a step of supplying a gas comprising an oxidizer gas to the chemical vapor deposition apparatus, wherein the steps are alternately performed. The oxidizer gas is an oxygen gas, an ozone gas, a nitrogen oxide gas or steam. The substrate is a silicon substrate, a sapphire substrate, a ceramic substrate, a glass substrate, a metal substrate or an alloy substrate. The organic solvent is ether, ketone, ester, hydrocarbon or alcohol. The dimethylzinc or diethylzinc is contained in the raw material within a content range from 0.1 to 5 mol/L.