FABRICATING METHOD FOR PHOSPHORUS- AND ARSENIC- DOPED P-TYPE ZNO THIN FILMS WITH AMPOULE-TUBE METHOD

• Main Authors: WANG, MIN SUNG, HU JIE JIN, SO, SOO JIN, PARK, CHOON BAE
• Format: Patent
• Language: English
• Published: 05.12.2006
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for utilizing GaN and ZnO by solving a preparation problem of ZnO thin films with p type conductivity that has been known to be very difficult to be solved is provided. A method for preparing a phosphorus- and arsenic-doped p-type ZnO thin film by ampoule-tube method comprises gas phase-diffusing P and As as a dopant onto a ZnO-based single crystalline substrate or a non-doped ZnO-based thin film that is grown on a substrate within an ampoule tube of high vacuum. The gas phase-diffusion is performed at a temperature of 400 deg.C or more. The ampoule tube has a degree of vacuum of 10^-3 torr or less therein. The dopant is a phosphorous compound such as Zn3P2, an arsenic compound such as ZnAs2, or phosphorous or arsenic itself. The substrate includes substrates made of Si, sapphire, SiC and oxides, and a substrate having a phosphorous or arsenic-containing epitaxial layer formed thereon.