THIN FILM TRANSISTOR SUBSTRATE

• Main Authors: OH, HWA YEUL, KIM, JANG SOO, KIM, SHI YUL, CHO, EOU SIK, WHANGBO, SANG WOO, CHAI, CHONG CHUL
• Format: Patent
• Language: English
• Published: 08.11.2006
• Subjects: DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A thin film transistor substrate is provided to reduce the variation of capacitance of a storage capacitor, which is formed in a MOS(Metal Oxide Semiconductor) structure, thereby removing the display defect such as flicker, etc. A gate wiring(120) is formed on an insulating substrate. The gate wiring has a gate line(122) and a first storage electrode(128). A gate insulating layer covers the gate wiring. An active layer(140) is formed on the gate insulating layer, and partially overlaps the first storage electrode. A data wiring has a data line(152) and a second storage electrode(154). The data line is formed on the active layer, and crosses the gate line. The second storage electrode overlaps the first storage electrode. The first storage electrode has a smaller width than the active layer, thereby exposing an edge of the active layer.