PROCESS FOR CLEANING SILICON SUBSTRATE

A method for cleaning a silicon substrate is provided to prevent particles from being strongly attached to an unwanted portion due to a hydrogen ion implantation and to restrain the generation of voids by removing completely the particles before the hydrogen ion implantation. A substrate cleaning pr...

Full description

Saved in:
Bibliographic Details
Main Authors NISHIHATA HIDEKI, MORIMOTO NOBUYUKI, KUSABA TATSUMI
Format Patent
LanguageEnglish
Published 24.10.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for cleaning a silicon substrate is provided to prevent particles from being strongly attached to an unwanted portion due to a hydrogen ion implantation and to restrain the generation of voids by removing completely the particles before the hydrogen ion implantation. A substrate cleaning process is carried out before a hydrogen ion implantation. The substrate cleaning process is performed under various cleaning conditions. The substrate cleaning process is one selected from a group consisting of an SC-1 cleaning process, SC-1 and SC-2 cleaning processes, an HF/O3 cleaning process or the combination thereof.
Bibliography:Application Number: KR20060034633