TRANSFER-MOLDED POWER DEVICE AND METHOD FOR MANUFACTURING TRANSFER-MOLDED POWER DEVICE

• Main Authors: HIRANO NAOHIKO, NAKASE YOSHIMI, NORITAKE CHIKAGE, YAGI KENJI, OOKURA YASUSHI, MAMITSU KUNIAKI, FUKUDA YUTAKA, NOMURA KAZUHITO, TESHIMA TAKANORI, SUZUKI MIKIMASA
• Format: Patent
• Language: English
• Published: 20.10.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A transfer molding power device and its manufacturing method are provided to secure the reliability of the device for a long time without damages by preventing the damage of a mold resin and a solder under a large thermal stress condition using a semiconductor chip surface with an aiming surface roughness. A transfer molding power device comprises a semiconductor chip, a metallic plate, a mold resin and a pair of adhesive layers. The semiconductor chip(2) has first and second surfaces. The metallic plate contacts directly the first and the second surfaced of the semiconductor chip in order to dissipate the heat of the semiconductor chip. The mold resin(7) is used for molding the semiconductor chip and the metallic plate. The pair of adhesive layers are formed on the first surface of the semiconductor chip in order to fix the semiconductor chip to the metallic plate. The first and the second surfaces of the semiconductor chip have a surface roughness of 500 nm or less.