METHOD OF FORMING TUNGSTEN FILM
A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuu...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
13.09.2006
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuumizing-enabled treating vessel (22), a reduction gas supplying process (70) and a tungsten gas supplying process (72) for supplying a tungsten-containing gas are alternately repeated with a purge process (74), for supplying an inert gas while vacuumizing, intervened therebetween to thereby form an initial tungsten film (76). Therefore, an initial tungsten film can be formed as a nucleation layer high in film thickness uniformity; and, accordingly, when main tungsten films are subsequently deposited, it is possible to restrict voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and provide good burying characteristics. |
---|---|
Bibliography: | Application Number: KR20067015538 |