유도결합플라즈마를가지는챔버에서스퍼터링동안측벽커버리지를개선하기위한방법및장치

• Main Authors: NGAN KENNY K, RAMASWAMI SESHADRI, HUI SIMON
• Format: Patent
• Language: Korean
• Published: 02.08.2006
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

스퍼터된 재료에 의해 증가된 측벽 커버리지는 비교적 낮은 압력의 스퍼터링 가스에서 이온화 플라즈마를 생성함으로써 달성된다. 스퍼터링 가스의 압력을 감소시킴으로써, 플라즈마를 통하여 통과하는 증착 재료의 이온화 비율은 대응하여 감소되고 차례로 하부층에 의해 측벽 커버리지를 증가시키는 것이 믿어진다. 비록 이온화 비율이 감소될지라도, 재료에 의해 충분한 하부 커버리지가 유지된다. 다른 실시예에서, 재료에 의해 증가된 측벽 커버리지는 재료의 증착중 초기 부분 동안만 고밀도 플라즈마를 생성함으로써 고밀도 플라즈마 챔버에서 조차 달성될 수 있다. 일단 우수한 하부 커버리지가 달성되면, 고밀도 플라즈마를 생성하는 코일에 대한 RF 전력은 완전히 턴오프되고 증착 잔류부는 고밀도 플라즈마없이 행해진다. 결과적으로, 우수한 측벽 커버리지가 증착의 추후 부분에서 달성되는 것이 발견되었다. Increased sidewall (510) coverage of channels, vias and other high aspect ratio openings in a substrate by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage (510) of underlayers (504). Although the ionization rate is decreased, sufficient bottom coverage (508) of the channels by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.