SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes a semiconductor substrate including an isolation trench provided on a surface thereof, an isolation film provided in the isolation trench, the isolation film including a coating film and a silicon oxide film provided on the coating film, and an oxide film provided bet...

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Bibliographic Details
Main Authors KIYOTOSHI MASAHIRO, KAWASAKI ATSUKO
Format Patent
LanguageEnglish
Published 01.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate including an isolation trench provided on a surface thereof, an isolation film provided in the isolation trench, the isolation film including a coating film and a silicon oxide film provided on the coating film, and an oxide film provided between the isolation trench and the isolation film, the oxide film having a thickness such that a portion on a side surface of the isolation trench corresponding to an interface portion between the coating film and the silicon oxide film is thicker than other portion on the side surface.
Bibliography:Application Number: KR20050112715