SEMICONDUCTOR DEVICE, ELECTRO-OPTIC DEVICE, INTEGRATED CIRCUIT, AND ELECTRONIC APPARATUS

• Main Author: HIROSHIMA YASUSHI
• Format: Patent
• Language: English
• Published: 15.05.2006
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A method of manufacturing a semiconductor is provided. The method includes the steps of forming a priming insulation film on a substrate, forming a first insulation film on the priming insulation film, forming an opening with a diameter of d1 in the first insulation film, and forming a second insulation film on the first insulation film including the opening The film thickness distribution of the second insulation film in the step of forming the second insulation film is ±y %, wherein the diameter d1 of the opening satisfies the following relationship: d1<=6500/y+85 nm.