SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

The device has a substrate with several active regions (102a, 102b). Each region has a length in a direction of an axis and width in the direction of another axis, where the length is larger than the width. The regions are provided in slots, where regions in adjacent slots are displaced in the direc...

Full description

Saved in:
Bibliographic Details
Main Authors GOO, DOO HOON, BAEK, KYOUNG YUN, YEO, GI SUNG, MOON, JOO TAE, CHO, HAN KU, WOO, SANG GYUN
Format Patent
LanguageEnglish
Published 12.04.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The device has a substrate with several active regions (102a, 102b). Each region has a length in a direction of an axis and width in the direction of another axis, where the length is larger than the width. The regions are provided in slots, where regions in adjacent slots are displaced in the direction of the latter axis. A field separation layer is provided at the substrate, where the layer surrounds the regions.
Bibliography:Application Number: KR20040080460