PRODUCTION METHOD FOR SEMICONDUCTOR WAFER

A production method for a semiconductor wafer capable of reducing fine surface undulations produced by wire-saw slicing or double-disc grinding by semi-fixed abrasive-grain grinding using free abrasive grains, and simplifying a conventional semiconductor wafer production process. A production method...

Full description

Saved in:
Bibliographic Details
Main Author ASAKAWA KEIICHIRO
Format Patent
LanguageEnglish
Published 17.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TOOLS FOR GRINDING, BUFFING, OR SHARPENING
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:A production method for a semiconductor wafer capable of reducing fine surface undulations produced by wire-saw slicing or double-disc grinding by semi-fixed abrasive-grain grinding using free abrasive grains, and simplifying a conventional semiconductor wafer production process. A production method for a semiconductor wafer for carrying out, after a slicing step, a chamfering step, an etching step, and a one-side or double-side polishing step, characterized in that, after the slicing step, a semi-fixed abrasive-grain grinding step is conducted using a porous polishing pad and free abrasive grains.
Bibliography:Application Number: KR20057022726