SHALLOW TRENCH ISOLATION PROCESS

A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.

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Bibliographic Details
Main Authors CURRIE MATHEW T, LOCHTEFELD ANTHONY J
Format Patent
LanguageEnglish
Published 08.12.2005
Edition7
Subjects
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Summary:A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.
Bibliography:Application Number: KR20057016595