SHALLOW TRENCH ISOLATION PROCESS
A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
08.12.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor. |
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Bibliography: | Application Number: KR20057016595 |