METHOD OF FORMING METAL WIRING IN FLASH MEMORY DEVICE

The present invention discloses a method for forming metal lines in a semiconductor device. A plurality of metal lines are densely formed by using Al or Al alloy as a material and performing a reactive ion etching process using a low-k dielectric layer as hard mask patterns. Barrier metal layers are...

Full description

Saved in:
Bibliographic Details
Main Author RYU, HYUN KYU
Format Patent
LanguageEnglish
Published 07.07.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present invention discloses a method for forming metal lines in a semiconductor device. A plurality of metal lines are densely formed by using Al or Al alloy as a material and performing a reactive ion etching process using a low-k dielectric layer as hard mask patterns. Barrier metal layers are formed on the sidewalls of the metal lines. A low dielectric interlayer insulation film is formed when the low dielectric hard mask patterns exist. It is thus possible to obtain margins in a line process and gains in a critical value of the interlayer insulation film for insulating the metal lines. Therefore, a RC delay time can be reduced by restricting crosstalk between the metal lines and decreasing a capacitance between the metal lines.
Bibliography:Application Number: KR20030100158