METHOD AND APPARATUS FOR CONTROLLING PLASMA GENERATION USING SIMPLIFIED DUAL FREQUENCY RF SOURCE

• Main Authors: TAKAKURA, YASHUSH, PATERSON, ALEX, SHANNON, STEVEN C, GRIMARD, DENNIS, HOLLAND, JOHN P, PANAGOPOULOS, THEODOROS
• Format: Patent
• Language: English; Korean
• Published: 28.02.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method and an apparatus for controlling plasma generation using a dual frequency RF(Radio Frequency) source are provided to reduce manufacturing cost of the plasma by simplifying a dual frequency RF lower stage structure. CONSTITUTION: An apparatus for plasma processing on a semiconductor substrate includes a processing chamber(502), substrate support pedestal(512), a first electrode, a dual frequency RF power source, and a plasma(548). The substrate support pedestal is disposed within the processing chamber. The first electrode is disposed within the pedestal. The dual frequency RF power source is coupled to the first electrode and supplies first and second RF signals. The plasma is formed in the chamber and has a plasma sheath. The plasma sheath performs modulation at the desired frequency equal to the difference between the first and second RF signals.