CERIUM OXIDE POWDER AND CERIUM OXIDE-CONTAINED DISPERSANT FOR POLISHING OF SEMICONDUCTOR SUBSTRATE

PURPOSE: Provided is a method for preparing cerium oxide(CeOx) powder and CeOx-contained dispersant with high stability for use in polishing of semiconductor substrates. CONSTITUTION: The polycrystalline cerium oxide powder, CeOx (1.5 < x < 2), has 70-150m¬2/g of specific surface area, 5-20nm...

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Main Authors KATUSIC, STIPAN, STAAB, EDWIN, KRESS, PETER, KRAEMER, MICHAEL, HEBERER, STEFAN, KROELL, MICHAEL
Format Patent
LanguageEnglish
Korean
Published 28.02.2005
Edition7
Subjects
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Summary:PURPOSE: Provided is a method for preparing cerium oxide(CeOx) powder and CeOx-contained dispersant with high stability for use in polishing of semiconductor substrates. CONSTITUTION: The polycrystalline cerium oxide powder, CeOx (1.5 < x < 2), has 70-150m¬2/g of specific surface area, 5-20nm of primary particle diameter, 20-100nm of agglomerate diameter, and 0.4-0.6ml/g of mesopore volume, wherein more than 68% of primary particles are in the range of 0.6m - 1.4m, more than 70% of agglomerates have the surface area less than 1500nm¬2. The cerium oxide powder contains less than 500ppm of sodium and less than 0.1wt.% of carbon. Also, the cerium oxide powder is prepared by the following steps of: preparing an aerosol from the solution containing 2-40wt.% of cerium compound, changing into cerium oxide by gas(air) and oxidation; preparing flames from primary air such as H2-contained combustible gas, air or air/O2 ; pouring secondary air, two times the amount of primary air, into a reaction chamber, keeping lambda λ, 1.1 <= lambda λ<= 1.5, wherein λ is calculated by dividing the total fraction of O2 in primary/secondary air and atomizing gas with the amount of oxidizing cerium compound and O2-contained combustible gas, 55m/s of release speed of liquid drop from atomizer to reaction chamber; cooling reaction mixtures to 100-200deg.C. The CeOx-contained dispersant contains 2-20wt.% of CeO2, having average diameter of agglomerates(d50) less than 200nm, in 0.1-50wt.%(based on CeOx) of dispersant such as organic polymer, non-ionic surfactant or amine.
Bibliography:Application Number: KR20040063423