METHOD FOR FORMING CONTACT HOLE IN SEMICONDUCTOR DEVICE FOR IMPROVING PROFILE OF CONTACT HOLE USING DOUBLE-LAYERED INTERLAYER DIELECTRIC INCLUDING LOWER-DOPED INSULATING LAYER AND UPPER-UNDOPED INSULATING LAYER FOR OBTAINING VERTICAL PROFILE

PURPOSE: A method for forming a contact hole in a semiconductor device for improving a profile of the contact hole using double-layered interlayer dielectric is provided to obtain a vertical profile of the contact hole by forming an interlayer dielectric with a lower-doped insulating layer and an up...

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Bibliographic Details
Main Authors KIM, HYONG SOO, LEE, JU BUM, KIM, SHIN HYE
Format Patent
LanguageEnglish
Korean
Published 21.02.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for forming a contact hole in a semiconductor device for improving a profile of the contact hole using double-layered interlayer dielectric is provided to obtain a vertical profile of the contact hole by forming an interlayer dielectric with a lower-doped insulating layer and an upper-undoped insulating layer. CONSTITUTION: An interlayer dielectric is formed by forming an impurity-doped type first insulating layer(204a) and an impurity-undoped type second insulating layer(204b) on an underlayer. A mask layer pattern having an opening is formed on the interlayer dielectric. A contact hole(210) is formed by an etching process using the mask layer pattern as an etching mask. Impurity ions are implanted into an exposed side of the underlayer. The mask layer pattern is removed therefrom and a cleaning process is performed.
Bibliography:Application Number: KR20030054783