METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING POLYSILICON ETCH MASK TO FORM ETCH PROFILE OF DESIRED TYPE WITHOUT GENERATING THE SAME STRIATION AS PHOTORESIST

• Main Authors: HONG, CHANG KI, HAN, JEONG NAM, HAN, WOO SUNG, SHIM, WOO GWAN, CHOI, SANG JUN
• Format: Patent
• Language: English; Korean
• Published: 07.02.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for fabricating a semiconductor device using a polysilicon etch mask is provided to form an etch profile of a desired type without generating the same striation as photoresist by using a polysilicon layer pattern as an etch mask. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate. A polysilicon layer pattern is formed on the interlayer dielectric. The interlayer dielectric is etched to form a contact hole by using the polysilicon layer pattern as an etch mask. The polysilicon layer pattern is eliminated by an etch process in which etch selectivity is high with respect to the interlayer dielectric and the etch uniformity with respect to the front surface of a wafer is smaller than 3 percent. The contact hole is filled with a conductive material to form a contact(350).