UNSATURATED OXYGENATED FLUOROCARBON FOR USE IN SELECTIVE ANISOTROPIC ETCHING OF DIELECTRIC MATERIAL IN MULTILAYER SUBSTRATE
PURPOSE: Provided is a mixture comprising an unsaturated oxygenated fluorocarbon compound for removing at least a part of dielectric material from a multilayer substrate, which shows excellent etching selectivity on a photoresist mask and high etching rate. CONSTITUTION: The mixture for etching a di...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English Korean |
Published |
21.01.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: Provided is a mixture comprising an unsaturated oxygenated fluorocarbon compound for removing at least a part of dielectric material from a multilayer substrate, which shows excellent etching selectivity on a photoresist mask and high etching rate. CONSTITUTION: The mixture for etching a dielectric material from a multilayer substrate comprises an unsaturated oxygenated fluorocarbon compound represented by the formula of CxFyOzRq, wherein R is H, a C1-C5 hydrocarbyl, C1-C5 halocarbyl or C1-C5 halohydrocarbyl group, x is a number of 2-10, y is a number less than 2x-q. z is a number of 1-2, q is a number of 0-1 and the atomic ratio of F to C is less than 2, with the proviso that when x is a number of 3-10, y is a number less than 2x-q, z is 1 and 1 is 0, the mixture further comprises an oxidant in such an amount that the volume ratio of oxidant to unsaturated oxygenated fluorocarbon is 0:1-1.0:1. |
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Bibliography: | Application Number: KR20040054358 |