UNSATURATED OXYGENATED FLUOROCARBON FOR USE IN SELECTIVE ANISOTROPIC ETCHING OF DIELECTRIC MATERIAL IN MULTILAYER SUBSTRATE

• Main Authors: BADOWSKI, PETER R, SYVRET, ROBERT GEORGE, JI, BING, MOTIKA, STEPHEN ANDREW, PEARLSTEIN, RONALD MARTIN, BERGER, KERRY RENARD, KARWACKI, EUGENE JOSEPH JR
• Format: Patent
• Language: English; Korean
• Published: 21.01.2005
• Edition: 7
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

PURPOSE: Provided is a mixture comprising an unsaturated oxygenated fluorocarbon compound for removing at least a part of dielectric material from a multilayer substrate, which shows excellent etching selectivity on a photoresist mask and high etching rate. CONSTITUTION: The mixture for etching a dielectric material from a multilayer substrate comprises an unsaturated oxygenated fluorocarbon compound represented by the formula of CxFyOzRq, wherein R is H, a C1-C5 hydrocarbyl, C1-C5 halocarbyl or C1-C5 halohydrocarbyl group, x is a number of 2-10, y is a number less than 2x-q. z is a number of 1-2, q is a number of 0-1 and the atomic ratio of F to C is less than 2, with the proviso that when x is a number of 3-10, y is a number less than 2x-q, z is 1 and 1 is 0, the mixture further comprises an oxidant in such an amount that the volume ratio of oxidant to unsaturated oxygenated fluorocarbon is 0:1-1.0:1.