METHOD OF FORMING SEMICONDUCTOR DEVICE USING FIRST AND SECOND PHASE SHIFT MASKS FOR FORMING FINE CONTACT HOLES

PURPOSE: A method of forming a semiconductor device is provided to improve the degree of integration by forming fine contact holes on a semiconductor substrate using a first and second phase shift mask. CONSTITUTION: A first exposure is performed on a photoresist layer of a semiconductor substrate b...

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Bibliographic Details
Main Author MOON, SEUNG CHAN
Format Patent
LanguageEnglish
Korean
Published 07.01.2005
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method of forming a semiconductor device is provided to improve the degree of integration by forming fine contact holes on a semiconductor substrate using a first and second phase shift mask. CONSTITUTION: A first exposure is performed on a photoresist layer of a semiconductor substrate by using a first phase shift mask, wherein the first phase shift mask is used for forming contact holes of a dense pattern region. A second exposure is performed on the photoresist layer by using a second phase shift mask, wherein the second phase shift mask is used for forming contact holes of an independent pattern region. A plurality of fine contact holes are formed on the substrate by developing the exposed photoresist layer.
Bibliography:Application Number: KR20030043727