SEMICONDUCTOR DEVICE FOR REDUCING FATIGUE, INCREASING PERMANENT POLARIZATION, AND REDUCING COERCIVE FILED BY IMPROVING FERROELECTRIC PROPERTY OF PZT THIN FILM AND FABRICATING METHOD THEREOF
PURPOSE: A semiconductor device including a PZT thin film having an improved ferroelectric property and a fabricating method thereof are provided to maintain stoichiometry of PZT by restricting a mutual reaction between a PbRu2O7-x layer and a platinum layer. CONSTITUTION: A platinum layer(4) is for...
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| Main Authors | , |
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| Format | Patent |
| Language | English Korean |
| Published |
16.12.2004
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| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | PURPOSE: A semiconductor device including a PZT thin film having an improved ferroelectric property and a fabricating method thereof are provided to maintain stoichiometry of PZT by restricting a mutual reaction between a PbRu2O7-x layer and a platinum layer. CONSTITUTION: A platinum layer(4) is formed on an upper surface of a substrate(1). A PbRu2O7-x layer(2) is formed on an upper surface of the platinum layer. A PZT thin film(3) is formed on an upper surface of the PbRu2O7-x layer. A platinum layer is formed on an upper surface of the PZT layer. A thickness of the PbRu2O7-x layer is 20 to 50nm. |
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| AbstractList | PURPOSE: A semiconductor device including a PZT thin film having an improved ferroelectric property and a fabricating method thereof are provided to maintain stoichiometry of PZT by restricting a mutual reaction between a PbRu2O7-x layer and a platinum layer. CONSTITUTION: A platinum layer(4) is formed on an upper surface of a substrate(1). A PbRu2O7-x layer(2) is formed on an upper surface of the platinum layer. A PZT thin film(3) is formed on an upper surface of the PbRu2O7-x layer. A platinum layer is formed on an upper surface of the PZT layer. A thickness of the PbRu2O7-x layer is 20 to 50nm. |
| Author | YOON, SUN GIL RYU, SEONG NAM |
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| Snippet | PURPOSE: A semiconductor device including a PZT thin film having an improved ferroelectric property and a fabricating method thereof are provided to maintain... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE FOR REDUCING FATIGUE, INCREASING PERMANENT POLARIZATION, AND REDUCING COERCIVE FILED BY IMPROVING FERROELECTRIC PROPERTY OF PZT THIN FILM AND FABRICATING METHOD THEREOF |
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