SEMICONDUCTOR DEVICE FOR REDUCING FATIGUE, INCREASING PERMANENT POLARIZATION, AND REDUCING COERCIVE FILED BY IMPROVING FERROELECTRIC PROPERTY OF PZT THIN FILM AND FABRICATING METHOD THEREOF

PURPOSE: A semiconductor device including a PZT thin film having an improved ferroelectric property and a fabricating method thereof are provided to maintain stoichiometry of PZT by restricting a mutual reaction between a PbRu2O7-x layer and a platinum layer. CONSTITUTION: A platinum layer(4) is for...

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Bibliographic Details
Main Authors RYU, SEONG NAM, YOON, SUN GIL
Format Patent
LanguageEnglish
Korean
Published 16.12.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device including a PZT thin film having an improved ferroelectric property and a fabricating method thereof are provided to maintain stoichiometry of PZT by restricting a mutual reaction between a PbRu2O7-x layer and a platinum layer. CONSTITUTION: A platinum layer(4) is formed on an upper surface of a substrate(1). A PbRu2O7-x layer(2) is formed on an upper surface of the platinum layer. A PZT thin film(3) is formed on an upper surface of the PbRu2O7-x layer. A platinum layer is formed on an upper surface of the PZT layer. A thickness of the PbRu2O7-x layer is 20 to 50nm.
Bibliography:Application Number: KR20030036639