METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING RESIST PATTERN

• Main Authors: MATSUSHITA, ATSUSHI, INUKAI, KAZUAKI
• Format: Patent
• Language: English; Korean
• Published: 02.12.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent the etching of a cap layer and an interlayer dielectric by performing an etching process on a stopper layer in a resist pattern remaining state and to restrain damage of the interlayer dielectric by performing an ashing process on the resist pattern using predetermined gas made of hydrogen and inert gas at a predetermined temperature. CONSTITUTION: A stopper layer(3), an interlayer dielectric(6), a cap layer(7), a resist pattern(8) are sequentially formed on a semiconductor substrate(2) with a conductive layer(5). An opening(9) for exposing the stopper layer is formed by etching the resultant structure using the resist pattern as an etching mask. A via hole(10) is formed by etching the stopper layer in a resist pattern remaining state. The resist pattern is removed from the resultant structure by performing ashing using mixed gas of hydrogen and inert gas at a temperature of 200 to 400 deg.C.