SEMICONDUCTOR DEVICE WITH CAPACITOR AND FABRICATING METHOD THEREOF TO IMPROVE RELIABILITY OF DIELECTRIC LAYER OF CAPACITOR

PURPOSE: A semiconductor device with a capacitor is provided to improve reliability of a dielectric layer of a capacitor by reducing a possibility that a leakage current occurs in the dielectric layer. CONSTITUTION: A semiconductor substrate(1) is prepared. A lower electrode(9) of a capacitor has a...

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Bibliographic Details
Main Authors AIHARA KAZUHIRO, INABA YUTAKA, WAKAO KAZUTOSHI, TSUCHIMOTO JUNICHI
Format Patent
LanguageEnglish
Korean
Published 26.11.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device with a capacitor is provided to improve reliability of a dielectric layer of a capacitor by reducing a possibility that a leakage current occurs in the dielectric layer. CONSTITUTION: A semiconductor substrate(1) is prepared. A lower electrode(9) of a capacitor has a vertical part formed to extend in an almost vertical direction to the main surface of the semiconductor substrate. The surface of the vertical part is covered with a dielectric layer(10) of the capacitor. In the dielectric layer of the capacitor, a layer thickness(t1) on the upper part of the vertical part is greater than that(t2) on the side surface of the vertical part.
Bibliography:Application Number: KR20030080160