METHOD OF MANUFACTURING GATE STRUCTURE OF FET USING DESIRED PLASMA

• Main Authors: KUMAR AJAY, NALLAN PADMAPANI C
• Format: Patent
• Language: English; Korean
• Published: 27.10.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method of manufacturing a gate structure of an FET(Field Effect Transistor) is provided to remove polymeric residues from a substrate by using a desired plasma. CONSTITUTION: A substrate with a hafnium-containing layer and a polysilicon layer on the hafnium-containing layer is provided. A...