METHOD OF MANUFACTURING GATE STRUCTURE OF FET USING DESIRED PLASMA

PURPOSE: A method of manufacturing a gate structure of an FET(Field Effect Transistor) is provided to remove polymeric residues from a substrate by using a desired plasma. CONSTITUTION: A substrate with a hafnium-containing layer and a polysilicon layer on the hafnium-containing layer is provided. A...

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Bibliographic Details
Main Authors KUMAR AJAY, NALLAN PADMAPANI C
Format Patent
LanguageEnglish
Korean
Published 27.10.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method of manufacturing a gate structure of an FET(Field Effect Transistor) is provided to remove polymeric residues from a substrate by using a desired plasma. CONSTITUTION: A substrate with a hafnium-containing layer and a polysilicon layer on the hafnium-containing layer is provided. A patterned mask is formed on the polysilicon layer(104). A plasma-etching process is performed on the polysilicon layer by using the patterned mask as an etching mask(106). At this time, polymeric residues are deposited on the substrate. The polymeric residues are removed from the substrate by using a plasma including one or more fluorocarbon-containing gas(110).
Bibliography:Application Number: KR20040026447