METHOD AND PROGRAM FOR DETERMINIOMPLEMENTARY DIVISION CONDITION AND COMPLEMENTARY DIVING METHOD TO CONTROL PATTERN DISPLACEMENT AND MASK BREAKDOWN OF STENCIL MASK

PURPOSE: A method for determining a complementary division condition is provided to control a pattern displacement and mask breakdown of a stencil mask by dividing a pattern while using a complementary division condition. CONSTITUTION: When an opening is formed in a mask, the displacement of a perip...

Full description

Saved in:
Bibliographic Details
Main Authors ASHIDA ISAO, NAKAYAMA KOHICHI
Format Patent
LanguageEnglish
Korean
Published 25.10.2004
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
AUXILIARY PROCESSES IN PHOTOGRAPHY
BASIC ELECTRIC ELEMENTS
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A method for determining a complementary division condition is provided to control a pattern displacement and mask breakdown of a stencil mask by dividing a pattern while using a complementary division condition. CONSTITUTION: When an opening is formed in a mask, the displacement of a peripheral mark is measured. The inner stress of the mask is determined based upon the measured displacement. The first analysis model is established in which a split pattern is acquired by dividing a division pattern divided in the mask with the inner stress in a various division condition. Based upon the first analysis model, a pattern displacement and a stress concentration generated by the opening of the split pattern are analyzed. The second analysis model is established in which a layer(3) between the split patterns is assumed by a two-ends fixing structure. Based upon the second analysis model, the displacement of the layer between the split patterns caused by outer force is analyzed. A complementary division condition is determined based upon the result of the first and second analyses and an allowable displacement and stress concentration.
Bibliography:Application Number: KR20040025344