CAPACITOR OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF TO REDUCE LEAKAGE CURRENT

PURPOSE: A capacitor of a semiconductor device and a method for manufacturing the same are provided to reduce leakage current of the capacitor by using an n-type poly Si1-xGex layer stacked on a metal film as an upper electrode. CONSTITUTION: A cylindrical capacitor comprises a lower electrode(140a)...

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Bibliographic Details
Main Authors JIN, BEOM JUN, JUNG, U IN, JUNG, EUN AE, KIM, HUI SEOK, KIM, YEONG SEON
Format Patent
LanguageEnglish
Korean
Published 20.10.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A capacitor of a semiconductor device and a method for manufacturing the same are provided to reduce leakage current of the capacitor by using an n-type poly Si1-xGex layer stacked on a metal film as an upper electrode. CONSTITUTION: A cylindrical capacitor comprises a lower electrode(140a) formed on a semiconductor substrate(100), a dielectric film(150) formed on the lower electrode, and an upper electrode(160) formed on the dielectric film. The upper electrode is provided with a metal film(152) and an n-type doped poly Si1-xGex layer(154) stacked on the metal film.
Bibliography:Application Number: KR20030023331