ANALYZER CHAMBER TO GENERATE HIGH VOLTAGE ARC IN DISCHARGE PROCESS FOR ION IMPLANTATION

PURPOSE: An analyzer chamber is provided to control damage to the inside of an analyzer chamber by generating a high voltage arc in a discharge process for ion implantation, and to remarkably reduce a process defect in an ion implantation process by easily and occasionally removing the ion beam remn...

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Bibliographic Details
Main Author KIM, HYEONG YONG
Format Patent
LanguageEnglish
Korean
Published 30.09.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An analyzer chamber is provided to control damage to the inside of an analyzer chamber by generating a high voltage arc in a discharge process for ion implantation, and to remarkably reduce a process defect in an ion implantation process by easily and occasionally removing the ion beam remnants from the analyzer chamber. CONSTITUTION: The ion beam extracted from an ion source passes through the analyzer chamber(10). The graphite shield(20) is installed in the right and left portions and the upper and lower portions of the inner wall of the analyzer chamber with respect to the progression direction of the ion beam.
Bibliography:Application Number: KR20030017098